ml7xx32 series type name ML792E32 / m l792h32 mitsubishi laser diodes 10gbps ingaasp dfb laser diode description ml7xx32 series are uncooled dfb (distributed feedback) laser diodes for 10gbps transmission emitting light beam at 1310nm. l /4 phase shifted grating structure is employed to obtain excellent smsr performance under 10gbps modulation. furthermore, ml7xx32 is able to operate in the wide temperature range from 0 o c to 85 o c without temperature control. features 10 gbps ethernet/short reach application absolute maximum ratings l /4 phase shifted grating structure high side-mode-suppression-ratio (typical 45db) wide temperature range operation ( 0 o c to 85 o c ) high resonance frequency (typical 15ghz) electrical/optical characteristics threshold current operation current operating voltage peak wavelength beam divergence angle (parallel) (perpendicular) side mode suppression ratio rise time(20%-80%) symbol parameter conditions min. typ. max. unit ith cw - 2 0 ma iop cw,po=5mw - 3 0 4 0 ma v vop cw,po=5mw 1.1 1. 8 l p 1310 nm q cw,po=5mw - 25 45 deg. - 15 - - smsr fr 10 gbps, ex=7db, vpp=2.0v 40 - 30 deg. 35 45 resonance frequency db 4 0 ghz 1 29 0 1330 - limits ma cw,tc=85 o c cw,po=5mw,tc=85 o c h cw,po=5mw 10gbps, ex=7db, vpp=2.0v 4th order bessel - thompson filter - 3 0 40 - 70 9 0 ma mw/ma 0.25 0.20 - cw,po=5mw 3 0 psec slope efficiency symbol parameter conditions ratings unit if laser forward current 120 ma vrl laser reverse voltage - 2 v tc operation temperature - 0 ~ +85 tstg storage temperature - -40 ~+100 - mitsubishi electric mar. 2003 t r 9 f all time(20%-80%) 3 0 4 0 - - cw,po=5mw,tc= 0 o c ~ +85 o c cw,po=5mw,tc= 0 o c ~ +85 o c t f q ^ (tc=25 o c ) o c o c chip-on-carrier 42 1 ohm ML792E32-01 ml792h32-01 matching resistance :rs type *** specification note notice: some parametric limits are subject to change
outline drawings ml7xx32 series mitsubishi laser diodes 10gbps ingaasp dfb-laser diode ML792E32 (2) (1) case mitsubishi electric mar. 2003 rs 2.1 0.05 beam point rs beam point ml792h32 (2) (1) case rs 2.1 0.05 beam point rs beam point rs
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